QN3107M6N mosfet equivalent, n-channel 30v fast switching mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
VDS 30V
RDS(ON) max
(VGS=10V)
2.6mΩ
ID
(TC=25 °C)
118A.
The QN3107M6N meets RoHS and Green Product requirements while supporting full function reliability.
Features
Advanc.
The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
The QN3107M6N meet.
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